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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
BB504M
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
ADE-208-982E (Z) 6th. Edition Mar. 2001 Features
* * * * Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF = 1.75 dB typ. at f =900 MHz High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. * Provide mini mold packages; MPAK-4 (SOT-143Rmod)
Outline
MPAK-4
2 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
Notes:
1. 2.
Marking is "DS-". BB504M is individual type number of HITACHI BBFET.
BB504M
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 -0 +6 -0 30 150 150 -55 to +150 Unit V V V mA mW C C
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 -- -- 0.6 0.6 13 24 1.7 1.0 -- 25 -- 17 -- Typ -- -- -- -- -- 0.85 0.85 16 29 2.1 1.4 0.027 30 1.0 22 1.75 Max -- -- -- +100 +100 1.1 1.1 19 34 2.5 1.8 0.05 -- 1.8 -- 2.3 Unit V V V nA nA V V mA mS pF pF pF dB dB dB dB Test Conditions I D = 200A, VG1S = VG2S = 0 I G1 = +10A, VG2S = VDS = 0 I G2 = +10A, VG1S = VDS = 0 VG1S = +5V, V G2S = VDS = 0 VG2S = +5V, V G1S = VDS = 0 VDS = 5V, VG2S = 4V, ID = 100A VDS = 5V, VG1S = 5V, ID = 100A VDS = 5V, VG1 = 5V VG2S = 4V, RG = 120k VDS = 5V, VG1 = 5V, VG2S =4V RG = 120k, f = 1kHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 120k f = 1MHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 120k f = 200MHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 120k f = 900MHz
Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain (1) Noise figure (1) Power gain (2) Noise figure (2) I D(op) |yfs| c iss c oss c rss PG NF PG NF
2
BB504M
Test Circuits
* DC Biasing Circuit for Operating Characteristics Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG)
VG2 Gate 2 Gate 1
RG
VG1
A ID
Drain
Source
* 200 MHz Power Gain, Noise Figure Test Circuit
VT 1000p VG2 1000p VT 1000p
47k Input(50) L1 1000p 36p
1000p
47k
BBFET L2 1000p
47k Output(50) 10p max
1000p 1SV70 RG 120k
RFC
1SV70
1000p V D = V G1 Unit Resistance () Capacitance (F)
L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
3
BB504M
* 900 MHz Power Gain, Noise Figure Test Circuit
VG1 VG2 C4 C5 VD C6
R1
R2 C3 G2
R3 D L3
RFC
Output L4
Input L1 L2
G1 S
C1
C2
C1, C2 C3 C4 to C6 R1 R2 R3
: : : : : :
Variable Capacitor (10pF MAX) Disk Capacitor (1000pF) Air Capacitor (1000pF) 120 k 47 k 4.7 k
L1: 10 10
L2:
26 3 3
(1mm Copper wire) Unit:mm
8
21 L4: 29 10 7 7 10
L3:
18
RFC : 1mm Copper wire with enamel 4turns inside dia 6mm
4
BB504M
Maximum Channel Power Dissipation Curve Typical Output Characteristics 20
82 10 k 15 0k 0 120 k k
Pch (mW)
200
I D (mA)
16
Channel Power Dissipation
12
100
Drain Current
RG
150
=6
V G2S = 4 V V G1 = VDS
8k
8
50
k 0 18 0k 22
4
0
50
100
150 Ta (C)
200
0
Ambient Temperature
1 2 3 Drain to Source Voltage
4 5 V DS (V)
Forward Transfer Admittance |y fs | (mS)
Drain Current vs. Gate1 Voltage 20 V DS = 5 V R G = 120 k
4V
Forward Transfer Admittance vs. Gate1 Voltage 30 V DS = 5 V R G = 120 k f = 1 kHz
4V 3V
I D (mA)
16
24
12
3V 2V
18
2V
Drain Current
8
12
4
VG2S = 1 V
6
VG2S = 1 V
0
1 2 Gate1 Voltage
3 V G1
4 (V)
5
0
1 2 3 4 Gate1 Voltage VG1 (V)
5
5
BB504M
Power Gain vs. Gate Resistance 40
Noise Figure NF (dB)
Noise Figure vs. Gate Resistance 4 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200MHz
35
Power Gain PG (dB)
3
30 25 20 15 10 10 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 20 50 100 200 500 1000 Gate Resistance R G (k )
2
1
0 10
20 50 100 200 500 1000 Gate Resistance R G (k )
Power Gain vs. Gate Resistance 40 35
Power Gain PG (dB)
Noise Figure vs. Gate Resistance 4
Noise Figure NF (dB)
3
30 25 20 15 10 10 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 900 MHz 20 50 100 200 500 1000 Gate Resistance R G (k )
V DS = 5V V G1 = 5 V V G2S = 4 V f = 900 MHz
2
1
0 10
20 50 100 200 500 1000 Gate Resistance R G (k )
6
BB504M
Drain Current vs. Gate Resistance 30 Input Capacitance Ciss (pF) 4 Input Capacitance vs. Gate2 to Source Voltage
Drain Current ID (mA)
3
20
2
10 V DS = VG1=5 V VG2S = 4 V 0 10
1
V DS = VG1= 5 V R G = 120 k f = 1 MHz 0 1 2 3 4
0 20 50 100 200 500 1000 Gate Resistance RG (k)
Gate2 to Source Voltage VGS2 (V)
Gain Reduction vs. Gate2 acto Source Voltage 0 Gain Reduction GR (dB) Gain Reduction GR (dB)
0
Gain Reduction vs. Gate2 acto Source Voltage
10
10
20
20
30 V DS = V G1 = 5 V R G = 120 k f = 200 MHz
30 V DS = V G1 = 5 V R G = 120 k f = 900 MHz
40
40
50
50 4 3 2 1 0 Gate2 to Source Voltage VGS2 (V)
4
3
2
1
0
Gate2 to Source Voltage VGS2 (V)
7
BB504M
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 - .2 -5 -4 -3 - .4 - .6 - .8 - 1.5 -2 - 120 - 90 - 60 -1 180 0 150 30 1 1.5 2
S21 Parameter vs. Frequency
90 120
Scale: 1 / div.
60
- 150
- 30
Test Condition: VDS = 5 V, V G1 = 5 V VG2S = 4 V, R G = 120 k , Zo = 50 50 to 1000 MHz (50 MHz step)
Test Condition: VDS = 5 V, V G1 = 5 V VG2S = 4 V, R G = 120 k , Zo = 50 50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90 120
S22 Parameter vs. Frequency
.8 .6 .4 3 1 1.5 2
Scale: 0.004/ div.
60
150
30 .2
4 5 10
180
0
0
.2
.4
.6 .8 1
1.5 2
3 45
10 -10
- .2 - 150 - 30 - .4 - 120 - 90 - 60 - .6 - .8 - 1.5 -2 -1
-5 -4 -3
Test Condition: VDS = 5 V, V G1 = 5 V VG2S = 4 V, R G = 120 k , Zo = 50 50 to 1000 MHz (50 MHz step)
Test Condition: VDS = 5 V, V G1 = 5 V VG2S = 4 V, R G = 120 k , Zo = 50 50 to 1000 MHz (50 MHz step)
8
BB504M
Sparameter (VDS = VG1 = 5V, VG2S = 4 V, RG = 120 k, Zo = 50 )
S11 f (MHz) MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1.000 0.993 0.991 0.984 0.978 0.970 0.958 0.954 0.945 0.932 0.920 0.910 0.900 0.887 0.870 0.863 0.853 0.839 0.827 0.819 ANG -3.3 -7.2 -10.9 -15.0 -19.0 -22.8 -26.7 -30.3 -33.8 -37.5 -40.6 -44.3 -47.5 -50.9 -54.4 -57.6 -60.9 -63.6 -66.5 -70.1 S21 MAG 2.80 2.78 2.77 2.74 2.72 2.68 2.64 2.60 2.56 2.50 2.46 2.41 2.37 2.31 2.27 2.22 2.18 2.12 2.07 2.04 ANG 175.9 170.9 166.1 161.2 156.5 151.8 147.2 142.7 138.6 134.1 129.8 125.7 121.6 117.8 113.6 110.0 105.8 102.2 98.6 94.9 S12 MAG 0.00106 0.00171 0.00253 0.00356 0.00442 0.00485 0.00576 0.00642 0.00689 0.00712 0.00765 0.00804 0.00798 0.00787 0.00785 0.00758 0.00721 0.00694 0.00716 0.00667 ANG 58.8 75.7 75.1 77.4 78.2 80.0 74.7 71.7 73.3 71.8 70.7 69.9 69.1 67.8 70.8 73.3 75.2 75.8 88.1 92.7 S22 MAG 0.990 0.992 0.991 0.987 0.985 0.982 0.978 0.973 0.968 0.963 0.958 0.952 0.947 0.942 0.936 0.929 0.924 0.917 0.912 0.906 ANG -2.4 -4.7 -7.2 -9.6 -12.2 -14.7 -17.1 -19.6 -22.0 -24.2 -26.7 -28.9 -31.3 -33.4 -35.8 -37.9 -40.3 -42.5 -44.5 -46.7
9
BB504M
Package Dimensions As of January, 2001
Unit: mm
2.95 0.2 1.9 0.2 0.95 0.95
0.4 - 0.05
+ 0.1
0.1 0.4 + 0.05 -
0.65
0.16 - 0.06
+ 0.1
1.5 0.15
+ 0.2 - 0.6
0 - 0.1
0.95
0.85
1.8 0.2
0.3
1.1 - 0.1
+ 0.2
0.65
0.1 0.4 + 0.05 -
0.1 0.6 + 0.05 -
2.8
Hitachi Code JEDEC EIAJ Mass (reference value)
MPAK-4 -- Conforms 0.013 g
10
BB504M
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica Europe Asia Japan
: : : :
http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
11

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